Occupational disorder of cobalt and indium in the crystal structure of Co5In3SbSi2O16.

Abstract

Penta-cobalt(II) triindium(III) anti-mony(V) disilicon(VI) hexa-deca-oxide, Co5In3SbSi2O16, was obtained as a single-crystalline by-product through a reaction with the silica glass ampoule during a chemical vapor transport reaction. It crystallizes isotypically with Co8TeAs2O16 in space group Cmce, with two (out of four) Co sites co-occupied by In, the Te site replaced by Sb, and the As site replaced by Si. The crystal structure of Co5In3SbSi2O16 consists of [CoO6], [(In,Co)O6], and [SbO6] octa-hedra, and [CoO4] and [SiO4] tetra-hedra, fused by vertex- and edge-sharing into a complex three-dimensional framework.

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